基于碳化硅MOSFET变温度参数模型的器件建模与仿真验证
发布时间：2018-09-14 15:09
【摘要】：碳化硅(SiC)是新型功率半导体材料之一,具有禁带宽、击穿电场高、热导率高、载流子漂移速率高、功率密集度高等诸多优点。以SiC材料为基础的功率半导体器件以优越的性能引起了广泛关注。其中,SiC MOSFET成为科研人员关注的热点。随着对SiC MOSFET研究的不断深入,建立精确的SiC MOSFET器件模型是亟待解决的问题之一,成为研究的焦点。本文依托于国网智能电网研究院"1200V SiC MOSFET器件制备及应用特性关键技术研究”项目,针对SiCMOSFET器件建模展开了研究工作。本文调研了大量功率器件模型,对前人的模型进行了总结分析,没有采用物理模型和传统的硅(Si) MOSFET模型,而采用功率半导体界普遍认可的变温度参数建模方法。本文以市场上使用最广的CREE公司第二代SiC MOSFET器件为例,进行建模原理的分析与介绍。本文首先对CREE公司提供的Spice标准测试模型进行了静态特性与动态特性测试,把此结果作为标准。然后,重点介绍了在PSpice软件中建立SiC MOSFET变温度参数模型的全过程。对从技术手册中选取建模需要的参数进行了详细介绍,给出了温控电阻、温度控制电压源、温度控制电流源在PSpice软件中建模的具体方法,对未来的研究工作具有指导意义。将静态模型在不同温度点下的仿真结果与Spice标准测试模型的测试结果进行对比,验证模型在不同温度点下的有效性与准确性。最后,对动态建模进行了分析介绍,根据半导体器件理论知识,改变了前人对于静态模型组成的划分方法,将体二极管建模归为动态建模部分,使建模更科学。对于影响动态特性的关键部分进行了详细介绍。将动态仿真结果与Spice标准测试模型的测试结果进行对比,验证模型动态特性的准确性。
[Abstract]:Silicon carbide (sic) (SiC) is one of the new power semiconductor materials, which has many advantages, such as wide band gap, high breakdown electric field, high thermal conductivity, high carrier drift rate, high power intensity and so on. Power semiconductor devices based on SiC materials have attracted wide attention due to their superior performance. Among them, sic MOSFET has become the focus of attention. With the development of SiC MOSFET research, the establishment of accurate SiC MOSFET device model is one of the problems to be solved and becomes the focus of research. In this paper, based on the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of China Smart Grid Research Institute, the research work on SiCMOSFET device modeling is carried out. In this paper, a large number of power device models have been investigated, and the previous models have been summarized and analyzed. Instead of physical model and traditional silicon (Si) MOSFET model, the widely accepted variable temperature parameter modeling method in power semiconductor field has been adopted. This paper analyzes and introduces the modeling principle of the second generation SiC MOSFET device of CREE Company, which is widely used in the market. In this paper, the static and dynamic characteristics of the Spice standard test model provided by CREE are tested, and this result is regarded as the standard. Then, the whole process of establishing SiC MOSFET variable temperature parameter model in PSpice software is introduced. This paper introduces in detail the parameters needed for modeling from the technical manual, and gives the methods of modeling temperature controlled resistor, temperature controlled voltage source and temperature controlled current source in PSpice software, which is of guiding significance for future research work. The simulation results of static model at different temperature points are compared with the test results of Spice standard test model to verify the validity and accuracy of the model at different temperature points. Finally, the dynamic modeling is analyzed and introduced. According to the theoretical knowledge of semiconductor devices, the former partition method of static model composition is changed, and the volume diode modeling is classified into dynamic modeling part, which makes the modeling more scientific. The key parts which affect the dynamic characteristics are introduced in detail. The dynamic simulation results are compared with the test results of the Spice standard test model to verify the accuracy of the dynamic characteristics of the model.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
本文编号：2243068
[Abstract]:Silicon carbide (sic) (SiC) is one of the new power semiconductor materials, which has many advantages, such as wide band gap, high breakdown electric field, high thermal conductivity, high carrier drift rate, high power intensity and so on. Power semiconductor devices based on SiC materials have attracted wide attention due to their superior performance. Among them, sic MOSFET has become the focus of attention. With the development of SiC MOSFET research, the establishment of accurate SiC MOSFET device model is one of the problems to be solved and becomes the focus of research. In this paper, based on the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of China Smart Grid Research Institute, the research work on SiCMOSFET device modeling is carried out. In this paper, a large number of power device models have been investigated, and the previous models have been summarized and analyzed. Instead of physical model and traditional silicon (Si) MOSFET model, the widely accepted variable temperature parameter modeling method in power semiconductor field has been adopted. This paper analyzes and introduces the modeling principle of the second generation SiC MOSFET device of CREE Company, which is widely used in the market. In this paper, the static and dynamic characteristics of the Spice standard test model provided by CREE are tested, and this result is regarded as the standard. Then, the whole process of establishing SiC MOSFET variable temperature parameter model in PSpice software is introduced. This paper introduces in detail the parameters needed for modeling from the technical manual, and gives the methods of modeling temperature controlled resistor, temperature controlled voltage source and temperature controlled current source in PSpice software, which is of guiding significance for future research work. The simulation results of static model at different temperature points are compared with the test results of Spice standard test model to verify the validity and accuracy of the model at different temperature points. Finally, the dynamic modeling is analyzed and introduced. According to the theoretical knowledge of semiconductor devices, the former partition method of static model composition is changed, and the volume diode modeling is classified into dynamic modeling part, which makes the modeling more scientific. The key parts which affect the dynamic characteristics are introduced in detail. The dynamic simulation results are compared with the test results of the Spice standard test model to verify the accuracy of the dynamic characteristics of the model.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
【参考文献】
相关期刊论文 前1条
1 钱照明;盛况;;大功率半导体器件的发展与展望[J];大功率变流技术;2010年01期
，本文编号：2243068
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